UPC2726T-E3【PDF 1/4 页】IC 1.6GHZ DIFFEREN MMIC AMP TO6

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录529

[1页]2页 3页 4页

1.6 GHz DIFFERENTIAL

WIDEBAND SILICON

RFIC AMPLIFIER

UPC2726T

FEATURES

NOISE FIGURE AND GAIN

vs. FREQUENCY AND VOLTAGE

? HIGH GAIN: 15 dB Typical at 400 MHz

G P

V CC = 5.0 V

? WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP

? SINGLE POSITIVE DC SUPPLY

? SUPER SMALL PACKAGE

? TAPE AND REEL PACKAGING OPTION AVAILABLE

2.0 V

3.0 V

DESCRIPTION

The UPC2726T is a Silicon RF Integrated Citrcuit which is

V CC = 2.0 V

V CC = 4.5--5.5 V

manufactured using the NESAT III process. The NESAT III

process produces transistors with f T approaching 20 GHz.

This amplifier was designed as a buffer amplifier for circuits

requiring differential inputs and outputs for increased common-

0.1

0.3 1.0

Frequency, f (GHz)

2.0

3.0

mode rejection.

GAIN vs. FREQUENCY

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

AND TEMPERATURE

-40 ° C

25 ° C

85 ° C

V CC = 5.0 V

0.1

0.3

1.0

2.0

3.0

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (T A = 25 ° C, Z L = Z S = 50 ? , f = 400 MHz)

PART NUMBER

PACKAGE OUTLINE

V CC = 5 V

UPC2726T

V CC = 2 V

SYMBOLS

I CC

G S

PARAMETERS AND CONDITIONS

Circuit Current, (No Signal)

Small Signal Gain

UNITS

MIN

TYP

11.5

MAX

MIN

TYP

2.5

4.5

MAX

Noise Figure

4.5

5.1

Upper limit Operating

Frequency 1

GHz

1.0

1.6

2.4

P SAT

RL IN

RL OUT

ISOL

OIP 3

Saturated Output Power

Input Return Loss

Output Return Loss

Isolation

Output 3rd Order Intercept Point 2

dBm

-5

-2

-2.5

-14

-10

Notes:

1. The Gain at fu is 3 dB down from the gain at 400 MHz.

2. f 1 = 400 MHz, f 2 = 402 MHz, single side band.

California Eastern Laboratories

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式